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IHW30N160R2 IGBT Transistor H30R1602 Power Semiconductor

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    Buy cheap IHW30N160R2 IGBT Transistor H30R1602 Power Semiconductor from wholesalers
     
    Buy cheap IHW30N160R2 IGBT Transistor H30R1602 Power Semiconductor from wholesalers
    • Buy cheap IHW30N160R2 IGBT Transistor H30R1602 Power Semiconductor from wholesalers
    • Buy cheap IHW30N160R2 IGBT Transistor H30R1602 Power Semiconductor from wholesalers

    IHW30N160R2 IGBT Transistor H30R1602 Power Semiconductor

    Ask Lasest Price
    Brand Name : Infineon Technologies/International Rectifier IOR
    Model Number : IHW30N160R2FKSA1
    Certification : ROHS
    Price : Negotiated
    Payment Terms : T/T, Western Union
    Supply Ability : 500000pcs
    Delivery Time : 2-15days
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    IHW30N160R2 IGBT Transistor H30R1602 Power Semiconductor

    IHW30N160R2 IGBTs Transistors H30R1602 Soft Switching Series Power Semiconductors IC IHW30N160R2FKSA1 Soft Switching Series


    Applications:
    • Inductive Cooking
    • Soft Switching Applications


    Description:

    TrenchStop® Reverse Conducting (RC-)IGBT with monolithic body diode
    Features:
    • Powerful monolithic Body Diode with very low forward voltage
    • Body diode clamps negative voltages
    • Trench and Fieldstop technology for 1600 V applications offers :
    - very tight parameter distribution
    - high ruggedness, temperature stable behavior
    • NPT technology offers easy parallel switching capability due to
    positive temperature coefficient in VCE(sat)
    • Low EMI
    • Qualified according to JEDEC1
    for target applications
    • Pb-free lead plating; RoHS compliant


    Specification:IGBT NPT, Trench Field Stop 1600 V 60 A 312 W Through Hole PG-TO247-3-1

    Part numberIHW30N160R2
    Category
    Discrete Semiconductor Products
     
    Transistors - IGBTs - Single
    Series
    TrenchStop®
    Package
    Tube
    IGBT Type
    NPT, Trench Field Stop
    Voltage - Collector Emitter Breakdown (Max)
    1600 V
    Current - Collector (Ic) (Max)
    60 A
    Current - Collector Pulsed (Icm)
    90 A
    Vce(on) (Max) @ Vge, Ic
    2.1V @ 15V, 30A
    Power - Max
    312 W
    Switching Energy
    4.37mJ
    Input Type
    Standard
    Gate Charge
    94 nC
    Td (on/off) @ 25°C
    -/525ns
    Test Condition
    600V, 30A, 10Ohm, 15V
    Operating Temperature
    -40°C ~ 175°C (TJ)
    Mounting Type
    Through Hole
    Package / Case
    TO-247-3
    Supplier Device Package
    PG-TO247-3-1

    Environmental & Export Classifications
    ATTRIBUTEDESCRIPTION
    RoHS StatusROHS3 Compliant
    Moisture Sensitivity Level (MSL)1 (Unlimited)
    REACH StatusREACH Unaffected
    ECCNEAR99
    HTSUS

    8541.29.0095


    Part numberIHW30N160R2FKSA1
    Base part numberIHW30N160R2
    EU RoHSCompliant with Exemption
    ECCN (US)EAR99
    Part StatusActive
    HTS8541.29.00.95

    IHW30N160R2 IGBT Transistor H30R1602 Power SemiconductorIHW30N160R2 IGBT Transistor H30R1602 Power Semiconductor


    IHW30N160R2 IGBT Transistor H30R1602 Power Semiconductor

    Substitutes (1):
    IXGH24N170 IXYS
    Quality IHW30N160R2 IGBT Transistor H30R1602 Power Semiconductor for sale
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