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IRF1404ZPBF N Channel Transistor 180A 200W HEXFET FET MOSFET

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    Buy cheap IRF1404ZPBF N Channel Transistor 180A 200W HEXFET FET MOSFET from wholesalers
     
    Buy cheap IRF1404ZPBF N Channel Transistor 180A 200W HEXFET FET MOSFET from wholesalers
    • Buy cheap IRF1404ZPBF N Channel Transistor 180A 200W HEXFET FET MOSFET from wholesalers
    • Buy cheap IRF1404ZPBF N Channel Transistor 180A 200W HEXFET FET MOSFET from wholesalers

    IRF1404ZPBF N Channel Transistor 180A 200W HEXFET FET MOSFET

    Ask Lasest Price
    Brand Name : Infineon Technologies/International Rectifier IOR
    Model Number : IRF1404ZPBF
    Certification : ROHS
    Price : Negotiated
    Payment Terms : T/T, Western Union
    Supply Ability : 500000pcs
    Delivery Time : 2-15days
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    IRF1404ZPBF N Channel Transistor 180A 200W HEXFET FET MOSFET

    IRF1404ZPBF Transistors N-Channel 180A 200W Through Hole TO-220AB HEXFET FETs MOSFETs


    N-Channel 180A (Tc) 200W (Tc) Through Hole TO-220AB Specification:

    Category
    Discrete Semiconductor Products
     
    Transistors - FETs, MOSFETs - Single
    Mfr
    Infineon Technologies
    Series
    HEXFET®
    Package
    Tube
    FET Type
    N-Channel
    Technology
    MOSFET (Metal Oxide)
    Drain to Source Voltage (Vdss)
    40 V
    Current - Continuous Drain (Id) @ 25°C
    180A (Tc)
    Drive Voltage (Max Rds On, Min Rds On)
    10V
    Rds On (Max) @ Id, Vgs
    3.7mOhm @ 75A, 10V
    Vgs(th) (Max) @ Id
    4V @ 250µA
    Gate Charge (Qg) (Max) @ Vgs
    150 nC @ 10 V
    Vgs (Max)
    ±20V
    Input Capacitance (Ciss) (Max) @ Vds
    4340 pF @ 25 V
    FET Feature
    -
    Power Dissipation (Max)
    200W (Tc)
    Operating Temperature
    -55°C ~ 175°C (TJ)
    Mounting Type
    Through Hole
    Supplier Device Package
    TO-220AB
    Package / Case
    TO-220-3
    Base Product Number
    IRF1404

    Description

    This HEXFET® Power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area.

    Additional features of this product are a 175°C junction operating temperature, fast switching speed and improved repetitive avalanche rating. These features combine to make this design an extremely efficient and reliable device for use in a wide variety of applications.


    Environmental & Export Classifications
    ATTRIBUTEDESCRIPTION
    RoHS StatusROHS3 Compliant
    Moisture Sensitivity Level (MSL)1 (Unlimited)
    REACH StatusREACH Unaffected
    ECCNEAR99
    HTSUS

    8541.29.0095


    Part numberIRF1404ZPBF
    Base part numberIRF1404
    EU RoHSCompliant with Exemption
    ECCN (US)EAR99
    Part StatusActive
    HTS8541.29.00.95


    IRF1404ZPBF N Channel Transistor 180A 200W HEXFET FET MOSFETIRF1404ZPBF N Channel Transistor 180A 200W HEXFET FET MOSFET

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